SI4835DY vishay siliconix document number: 70836 s-31062?rev. b, 26-may-03 www.vishay.com 1 p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.019 @ v gs = - 10 v - 8.0 -30 0.033 @ v gs = - 4.5 v - 6.0 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 sss g d d d d p-channel mosfet ordering information: SI4835DY SI4835DY-t1 (with t ape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 25 v continuous drain current (t j = 150 c) a, b t a = 25 c i d - 8.0 c on ti nuous d ra i n c urren t (t j = 150 c) a , b t a = 70 c i d - 6.4 a pulsed drain current i dm -50 a continuous source current (diode conduction) a, b i s - 2.1 maximum power dissipation a, b t a = 25 c p d 2.5 w maximum power dissipation a, b t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction to ambient a t 10 sec r 50 c/w maximum junction-to-ambient a steady state r thja 70 c/w notes a. surface mounted on fr4 board. b. t 10 sec.
SI4835DY vishay siliconix www.vishay.com 2 document number: 70836 s-31062?rev. b, 26-may-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 25 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v, t j = 70 c -5 a on state drain current a i d( ) v ds -5 v, v gs = - 10 v -40 a on-state drain current a i d(on) v ds -5 v, v gs = - 4.5 v -10 a drain source on state resistance a r v gs = - 10 v, i d = - 8.0 a 0.0155 0.019 drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 5.0 a 0.027 0.033 forward transconductance a g fs v ds = - 15 v, i d = - 8.0 a 17 s diode forward voltage a v sd i s = - 2.1 a, v gs = 0 v - 0.75 - 1.2 v dynamic b total gate charge q g 21 31 gate-source charge q gs v ds = - 10 v, v gs = - 5 v, i d = - 4.6 a 6.5 nc gate-drain charge q gd 8 gate resistance r g 1.0 2.6 4.4 turn-on delay time t d(on) 16 30 rise time t r v dd = - 15 v, r l = 15 13 25 turn-off delay time t d(off) v dd = - 15 v , r l = 15 i d - 1 a, v gen = - 10 v, r g = 6 56 100 ns fall time t f 30 60 source-drain reverse recovery time t rr i f = - 2.1 a, di/dt = 100 a/ s 40 80 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI4835DY vishay siliconix document number: 70836 s-31062?rev. b, 26-may-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 10 20 30 40 50 0123456 0.00 0.05 0.10 0.15 0.20 0 1020304050 0 10 20 30 40 50 0246810 0 2 4 6 8 10 0 10203040 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 3000 3500 0 6 12 18 24 30 v gs = 6 thru 10 v 25 c t c = - 55 c c rss c oss c iss v ds = 15 v i d = 4.6 a v gs = 10 v i d = 8.0 a v gs = 4.5 v 2 v 125 c 3 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 10 v 4 v 5 v
SI4835DY vishay siliconix www.vishay.com 4 document number: 70836 s-31062?rev. b, 26-may-03 typical characteristics (25 c unless noted) 0.01 0 1 60 80 20 40 10 30 0.1 power (w) single pulse power time (sec) - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 1.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0.10 0246810 1 10 30 i d = 8.0 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold v oltage variance (v) v gs(th) t j - temperature ( c) source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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